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Copy file name to clipboardExpand all lines: src/ram/README.md
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@@ -41,8 +41,6 @@ generate_ram [-mask_size bits]
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[-storage_cell name]
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[-tristate_cell name]
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[-inv_cell name]
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-power_pin name
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-ground_pin name
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[-power_net_name name]
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[-ground_net_name name]
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-routing_layer config
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|`-storage_cell`| Name of the master to use for the storage device (i.e. a flip-flop). Must be positive-edge triggered. Default: auto-select from the loaded cell library. |
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|`-tristate_cell`| Name of the master to use for the tristate device (i.e. a tristate inverter). It is currently assumed that the device is inverting. Default: auto-select from the loaded cell library. |
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|`-inv_cell`| Name of the master to use for inverters. Default: auto-select from the loaded cell library. |
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|`-power_pin`| Name of the power pin in each standard cell used. Only one name is currently supported. |
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|`-ground_pin`| Name of the ground pin in each standard cell used. Only one name is currently supported. |
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|`-routing_layer`| A list of the metal layer and metal width (in microns) for generating standard cell power tracks (followpins). Example: `{met1 0.48}`. |
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|`-power_net_name`| Name of the power net to create. Default: `VDD`. |
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|`-ground_net_name`| Name of the ground net to create. Default: `VSS`. |
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