diff --git a/include/viennaps/models/psPlasmaEtching.hpp b/include/viennaps/models/psPlasmaEtching.hpp
index f2b970e2..a45a1f76 100644
--- a/include/viennaps/models/psPlasmaEtching.hpp
+++ b/include/viennaps/models/psPlasmaEtching.hpp
@@ -108,6 +108,13 @@ class PlasmaEtchingSurfaceModel : public SurfaceModel<NumericType> {
           ieRate->at(i) = 0.;
           chRate->at(i) = 0.;
         }
+      } else if (MaterialMap::isMaterial(materialIds[i], Material::Polymer)) {
+        etchRate[i] = -(1 / params.Polymer.rho) * sputterRate * unitConversion;
+        if (Logger::getLogLevel() > 3) {
+          spRate->at(i) = sputterRate;
+          ieRate->at(i) = 0.;
+          chRate->at(i) = 0.;
+        }
       } else {
         etchRate[i] = -(1 / params.Substrate.rho) *
                       (chemicalRate + sputterRate + ionEnhancedRate) *
@@ -214,6 +221,10 @@ class PlasmaEtchingIon
       A_sp = params.Mask.A_sp;
       B_sp = params.Mask.B_sp;
       Eth_sp = params.Mask.Eth_sp;
+    } else if (MaterialMap::isMaterial(materialId, Material::Polymer)) {
+      A_sp = params.Polymer.A_sp;
+      B_sp = params.Polymer.B_sp;
+      Eth_sp = params.Polymer.Eth_sp;
     }
 
     // NumericType f_sp_theta = 1.;
diff --git a/include/viennaps/models/psPlasmaEtchingParameters.hpp b/include/viennaps/models/psPlasmaEtchingParameters.hpp
index 5effbd03..8dd0e947 100644
--- a/include/viennaps/models/psPlasmaEtchingParameters.hpp
+++ b/include/viennaps/models/psPlasmaEtchingParameters.hpp
@@ -28,6 +28,17 @@ template <typename NumericType> struct PlasmaEtchingParameters {
     NumericType B_sp = 9.3;
   } Mask;
 
+  // Polymer
+  struct PolymerType {
+    // density
+    NumericType rho = 5.0; // 1e22 atoms/cm³
+
+    // sputtering coefficients
+    NumericType Eth_sp = 15.; // eV
+    NumericType A_sp = 0.02;
+    NumericType B_sp = 8.5;
+  } Polymer;
+
   // Etching material
   struct MaterialType {
     // density
diff --git a/include/viennaps/models/psSF6C4F8Etching.hpp b/include/viennaps/models/psSF6C4F8Etching.hpp
new file mode 100644
index 00000000..1d2b3426
--- /dev/null
+++ b/include/viennaps/models/psSF6C4F8Etching.hpp
@@ -0,0 +1,157 @@
+#pragma once
+
+#include <rayParticle.hpp>
+#include <rayReflection.hpp>
+#include <rayUtil.hpp>
+
+#include "../psConstants.hpp"
+#include "../psProcessModel.hpp"
+#include "../psSurfaceModel.hpp"
+#include "../psUnits.hpp"
+#include "../psVelocityField.hpp"
+
+#include "psPlasmaEtching.hpp"
+#include "psPlasmaEtchingParameters.hpp"
+
+namespace viennaps {
+
+using namespace viennacore;
+
+/// Model for etching Si in a SF6/C4F8 plasma. This model extends the SF6O2
+/// etching model to include polymer etching. The polymer layer is deposited
+/// by a separate process and etched by sputtering similarly to the mask
+/// material. No passivation occurs in this model.
+template <typename NumericType, int D>
+class SF6C4F8Etching : public ProcessModel<NumericType, D> {
+public:
+  SF6C4F8Etching() {
+    params = defaultParameters();
+    initializeModel();
+  }
+
+  // All flux values are in units 1e15 / cm²
+  SF6C4F8Etching(const double ionFlux, const double etchantFlux,
+                 const NumericType meanEnergy /* eV */,
+                 const NumericType sigmaEnergy /* eV */, // 4 parameters
+                 const NumericType ionExponent = 300.,
+                 const NumericType etchStopDepth =
+                     std::numeric_limits<NumericType>::lowest()) {
+    params = defaultParameters();
+    params.ionFlux = ionFlux;
+    params.etchantFlux = etchantFlux;
+    params.passivationFlux = 0.; // No passivation
+    params.Ions.meanEnergy = meanEnergy;
+    params.Ions.sigmaEnergy = sigmaEnergy;
+    params.Ions.exponent = ionExponent;
+    params.etchStopDepth = etchStopDepth;
+    initializeModel();
+  }
+
+  SF6C4F8Etching(const PlasmaEtchingParameters<NumericType> &pParams)
+      : params(pParams) {
+    initializeModel();
+  }
+
+  void setParameters(const PlasmaEtchingParameters<NumericType> &pParams) {
+    params = pParams;
+    initializeModel();
+  }
+
+  PlasmaEtchingParameters<NumericType> &getParameters() { return params; }
+
+  static PlasmaEtchingParameters<NumericType> defaultParameters() {
+
+    PlasmaEtchingParameters<NumericType> defParams;
+
+    // fluxes in (1e15 /cm² /s)
+    defParams.ionFlux = 12.;
+    defParams.etchantFlux = 1.8e3;
+    defParams.passivationFlux = 0.; // No passivation
+
+    // sticking probabilities
+    defParams.beta_E = {{1, 0.7}, {0, 0.7}};
+    // No beta_P needed since passivationFlux = 0
+
+    defParams.etchStopDepth = std::numeric_limits<NumericType>::lowest();
+
+    // Mask
+    defParams.Mask.rho = 500.;   // 1e22 atoms/cm³
+    defParams.Mask.Eth_sp = 20.; // eV
+    defParams.Mask.A_sp = 0.0139;
+    defParams.Mask.B_sp = 9.3;
+
+    // Polymer (C4F8) - deposited by separate process, etched by sputtering
+    defParams.Polymer.rho = 5.0;    // 1e22 atoms/cm³
+    defParams.Polymer.Eth_sp = 15.; // eV
+    defParams.Polymer.A_sp = 0.02;
+    defParams.Polymer.B_sp = 8.5;
+
+    // Si
+    defParams.Substrate.rho = 5.02;   // 1e22 atoms/cm³
+    defParams.Substrate.Eth_sp = 20.; // eV
+    defParams.Substrate.Eth_ie = 15.; // eV
+    defParams.Substrate.A_sp = 0.0337;
+    defParams.Substrate.B_sp = 9.3;
+    defParams.Substrate.A_ie = 7.;
+    defParams.Substrate.B_ie = 0.8;
+    defParams.Substrate.k_sigma = 3.0e2;     // in (1e15 cm⁻²s⁻¹)
+    defParams.Substrate.beta_sigma = 4.0e-2; // in (1e15 cm⁻²s⁻¹)
+
+    // Passivation (unused in this model)
+    defParams.Passivation.Eth_ie = 10.; // eV
+    defParams.Passivation.A_ie = 3;
+
+    // Ions
+    defParams.Ions.meanEnergy = 100.; // eV
+    defParams.Ions.sigmaEnergy = 10.; // eV
+    defParams.Ions.exponent = 500.;
+
+    defParams.Ions.inflectAngle = 1.55334303;
+    defParams.Ions.n_l = 10.;
+    defParams.Ions.minAngle = 1.3962634;
+
+    defParams.Ions.thetaRMin = constants::degToRad(70.);
+    defParams.Ions.thetaRMax = constants::degToRad(90.);
+    return defParams;
+  }
+
+private:
+  void initializeModel() {
+    // check if units have been set
+    if (units::Length::getInstance().getUnit() == units::Length::UNDEFINED ||
+        units::Time::getInstance().getUnit() == units::Time::UNDEFINED) {
+      Logger::getInstance().addError("Units have not been set.").print();
+    }
+
+    // particles
+    this->particles.clear();
+    if (params.ionFlux > 0) {
+      auto ion =
+          std::make_unique<impl::PlasmaEtchingIon<NumericType, D>>(params);
+      this->insertNextParticleType(ion);
+    }
+    if (params.etchantFlux > 0) {
+      auto etchant =
+          std::make_unique<impl::PlasmaEtchingNeutral<NumericType, D>>(
+              "etchantFlux", params.beta_E, 2);
+      this->insertNextParticleType(etchant);
+    }
+    // No passivation particle since passivationFlux = 0
+
+    // surface model
+    auto surfModel =
+        SmartPointer<impl::PlasmaEtchingSurfaceModel<NumericType, D>>::New(
+            params);
+    this->setSurfaceModel(surfModel);
+
+    // velocity field
+    auto velField = SmartPointer<DefaultVelocityField<NumericType, D>>::New(2);
+    this->setVelocityField(velField);
+
+    this->setProcessName("SF6C4F8Etching");
+  }
+
+  PlasmaEtchingParameters<NumericType> params;
+};
+
+} // namespace viennaps
diff --git a/python/pyWrap.cpp b/python/pyWrap.cpp
index 9a403799..2d1870b0 100644
--- a/python/pyWrap.cpp
+++ b/python/pyWrap.cpp
@@ -66,6 +66,7 @@
 #include <models/psIsotropicProcess.hpp>
 #include <models/psMultiParticleProcess.hpp>
 #include <models/psOxideRegrowth.hpp>
+#include <models/psSF6C4F8Etching.hpp>
 #include <models/psSF6O2Etching.hpp>
 #include <models/psSingleParticleALD.hpp>
 #include <models/psSingleParticleProcess.hpp>
@@ -823,7 +824,7 @@ PYBIND11_MODULE(VIENNAPS_MODULE_NAME, module) {
           pybind11::arg("reactionOrderIon") = 1.,
           pybind11::arg("minAngleIon") = 0.);
 
-  // SF6O2 Parameters
+  // Plasma Etching Parameters
   pybind11::class_<PlasmaEtchingParameters<T>::MaskType>(
       module, "PlasmaEtchingParametersMask")
       .def(pybind11::init<>())
@@ -832,6 +833,15 @@ PYBIND11_MODULE(VIENNAPS_MODULE_NAME, module) {
       .def_readwrite("B_sp", &PlasmaEtchingParameters<T>::MaskType::B_sp)
       .def_readwrite("Eth_sp", &PlasmaEtchingParameters<T>::MaskType::Eth_sp);
 
+  pybind11::class_<PlasmaEtchingParameters<T>::PolymerType>(
+      module, "PlasmaEtchingParametersPolymer")
+      .def(pybind11::init<>())
+      .def_readwrite("rho", &PlasmaEtchingParameters<T>::PolymerType::rho)
+      .def_readwrite("A_sp", &PlasmaEtchingParameters<T>::PolymerType::A_sp)
+      .def_readwrite("B_sp", &PlasmaEtchingParameters<T>::PolymerType::B_sp)
+      .def_readwrite("Eth_sp",
+                     &PlasmaEtchingParameters<T>::PolymerType::Eth_sp);
+
   pybind11::class_<PlasmaEtchingParameters<T>::MaterialType>(
       module, "PlasmaEtchingParametersSubstrate")
       .def(pybind11::init<>())
@@ -942,6 +952,28 @@ PYBIND11_MODULE(VIENNAPS_MODULE_NAME, module) {
            pybind11::return_value_policy::reference)
       .def_static("defaultParameters", &HBrO2Etching<T, D>::defaultParameters);
 
+  // SF6C4F8 Etching
+  pybind11::class_<SF6C4F8Etching<T, D>, SmartPointer<SF6C4F8Etching<T, D>>>(
+      module, "SF6C4F8Etching", processModel)
+      .def(pybind11::init<>())
+      .def(
+          pybind11::init(&SmartPointer<SF6C4F8Etching<T, D>>::New<
+                         const double /*ionFlux*/, const double /*etchantFlux*/,
+                         const T /*meanEnergy*/, const T /*sigmaEnergy*/,
+                         const T /*ionExponent*/, const T /*etchStopDepth*/>),
+          pybind11::arg("ionFlux"), pybind11::arg("etchantFlux"),
+          pybind11::arg("meanEnergy"), pybind11::arg("sigmaEnergy"),
+          pybind11::arg("ionExponent") = 300.,
+          pybind11::arg("etchStopDepth") = std::numeric_limits<T>::lowest())
+      .def(pybind11::init(&SmartPointer<SF6C4F8Etching<T, D>>::New<
+                          const PlasmaEtchingParameters<T> &>),
+           pybind11::arg("parameters"))
+      .def("setParameters", &SF6C4F8Etching<T, D>::setParameters)
+      .def("getParameters", &SF6C4F8Etching<T, D>::getParameters,
+           pybind11::return_value_policy::reference)
+      .def_static("defaultParameters",
+                  &SF6C4F8Etching<T, D>::defaultParameters);
+
   // CF4O2 Parameters
   pybind11::class_<CF4O2Parameters<T>::MaskType>(module, "CF4O2ParametersMask")
       .def(pybind11::init<>())
diff --git a/python/viennaps2d/__init__.pyi b/python/viennaps2d/__init__.pyi
index 54dabb1e..026e3c3e 100644
--- a/python/viennaps2d/__init__.pyi
+++ b/python/viennaps2d/__init__.pyi
@@ -1,3 +1,6 @@
 from .viennaps2d import *
+from _typeshed import Incomplete
+
+ptxPath: Incomplete
 
 def ReadConfigFile(fileName: str): ...
diff --git a/python/viennaps2d/viennaps2d.pyi b/python/viennaps2d/viennaps2d.pyi
index 7a8ca8e6..67ea2008 100644
--- a/python/viennaps2d/viennaps2d.pyi
+++ b/python/viennaps2d/viennaps2d.pyi
@@ -1013,6 +1013,13 @@ class PlasmaEtchingParametersPassivation:
     Eth_ie: float
     def __init__(self) -> None: ...
 
+class PlasmaEtchingParametersPolymer:
+    A_sp: float
+    B_sp: float
+    Eth_sp: float
+    rho: float
+    def __init__(self) -> None: ...
+
 class PlasmaEtchingParametersSubstrate:
     A_ie: float
     A_sp: float
@@ -1125,6 +1132,34 @@ class RayTracingParameters:
     useRandomSeeds: bool
     def __init__(self) -> None: ...
 
+class Reader:
+    @overload
+    def __init__(self) -> None: ...
+    @overload
+    def __init__(self, fileName: str) -> None: ...
+    def apply(self) -> Domain: ...
+    def setFileName(self, arg0: str) -> None: ...
+
+class SF6C4F8Etching(ProcessModel):
+    @overload
+    def __init__(self) -> None: ...
+    @overload
+    def __init__(
+        self,
+        ionFlux: float,
+        etchantFlux: float,
+        meanEnergy: float,
+        sigmaEnergy: float,
+        ionExponent: float = ...,
+        etchStopDepth: float = ...,
+    ) -> None: ...
+    @overload
+    def __init__(self, parameters: PlasmaEtchingParameters) -> None: ...
+    @staticmethod
+    def defaultParameters() -> PlasmaEtchingParameters: ...
+    def getParameters(self) -> PlasmaEtchingParameters: ...
+    def setParameters(self, arg0: PlasmaEtchingParameters) -> None: ...
+
 class SF6O2Etching(ProcessModel):
     @overload
     def __init__(self) -> None: ...
@@ -1245,16 +1280,8 @@ class Writer:
     def __init__(self, domain: Domain) -> None: ...
     @overload
     def __init__(self, domain: Domain, fileName: str) -> None: ...
-    def setDomain(self, domain: Domain) -> None: ...
-    def setFileName(self, fileName: str) -> None: ...
     def apply(self) -> None: ...
-
-class Reader:
-    @overload
-    def __init__(self) -> None: ...
-    @overload
-    def __init__(self, fileName: str) -> None: ...
-    def setFileName(self, fileName: str) -> None: ...
-    def apply(self) -> Domain: ...
+    def setDomain(self, arg0: Domain) -> None: ...
+    def setFileName(self, arg0: str) -> None: ...
 
 def setNumThreads(arg0: int) -> None: ...
diff --git a/python/viennaps3d/__init__.pyi b/python/viennaps3d/__init__.pyi
index 0cfb31c3..71e2dfd3 100644
--- a/python/viennaps3d/__init__.pyi
+++ b/python/viennaps3d/__init__.pyi
@@ -1,3 +1,6 @@
 from .viennaps3d import *
+from _typeshed import Incomplete
+
+ptxPath: Incomplete
 
 def ReadConfigFile(fileName: str): ...
diff --git a/python/viennaps3d/viennaps3d.pyi b/python/viennaps3d/viennaps3d.pyi
index 6ab03086..6af79fa9 100644
--- a/python/viennaps3d/viennaps3d.pyi
+++ b/python/viennaps3d/viennaps3d.pyi
@@ -942,6 +942,13 @@ class PlasmaEtchingParametersPassivation:
     Eth_ie: float
     def __init__(self) -> None: ...
 
+class PlasmaEtchingParametersPolymer:
+    A_sp: float
+    B_sp: float
+    Eth_sp: float
+    rho: float
+    def __init__(self) -> None: ...
+
 class PlasmaEtchingParametersSubstrate:
     A_ie: float
     A_sp: float
@@ -1054,6 +1061,34 @@ class RayTracingParameters:
     useRandomSeeds: bool
     def __init__(self) -> None: ...
 
+class Reader:
+    @overload
+    def __init__(self) -> None: ...
+    @overload
+    def __init__(self, fileName: str) -> None: ...
+    def apply(self) -> Domain: ...
+    def setFileName(self, arg0: str) -> None: ...
+
+class SF6C4F8Etching(ProcessModel):
+    @overload
+    def __init__(self) -> None: ...
+    @overload
+    def __init__(
+        self,
+        ionFlux: float,
+        etchantFlux: float,
+        meanEnergy: float,
+        sigmaEnergy: float,
+        ionExponent: float = ...,
+        etchStopDepth: float = ...,
+    ) -> None: ...
+    @overload
+    def __init__(self, parameters: PlasmaEtchingParameters) -> None: ...
+    @staticmethod
+    def defaultParameters() -> PlasmaEtchingParameters: ...
+    def getParameters(self) -> PlasmaEtchingParameters: ...
+    def setParameters(self, arg0: PlasmaEtchingParameters) -> None: ...
+
 class SF6O2Etching(ProcessModel):
     @overload
     def __init__(self) -> None: ...
@@ -1174,16 +1209,8 @@ class Writer:
     def __init__(self, domain: Domain) -> None: ...
     @overload
     def __init__(self, domain: Domain, fileName: str) -> None: ...
-    def setDomain(self, domain: Domain) -> None: ...
-    def setFileName(self, fileName: str) -> None: ...
     def apply(self) -> None: ...
-
-class Reader:
-    @overload
-    def __init__(self) -> None: ...
-    @overload
-    def __init__(self, fileName: str) -> None: ...
-    def setFileName(self, fileName: str) -> None: ...
-    def apply(self) -> Domain: ...
+    def setDomain(self, arg0: Domain) -> None: ...
+    def setFileName(self, arg0: str) -> None: ...
 
 def setNumThreads(arg0: int) -> None: ...